Show Hamamatsu Avalanche Photo Diode 1415016261
					
					This is all the information about APD 1415016261. If it is wrong, edit the data.
					
						
							| Subdetector specification: | 
							  | 
						
						
							| Serial: | 
							1415016261 | 
						
						
							| Type: | 
							Hamamatsu Avalanche Photo Diode | 
						
						
							| Detector: | 
							unassigned | 
						
						
							| Unit: | 
							unassigned | 
						
						
							| Preamp: | 
							0 | 
						
						
							| Current location: | 
							In transit to Mainz | 
						
						
							|   | 
							  | 
						
						
							| Installation information: | 
							  | 
						
						
							| Label: | 
							none | 
						
						
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							  | 
						
						
							| Manufacturer information: | 
							  | 
						
						
							| Wafer position: | 
							H07 | 
						
						
							| Break-through voltage: | 
							410 V | 
						
						
							| Voltage for Gain 100 (T=+25°C): | 
							382.7 V | 
						
						
							| Dark current: | 
							3.6 nA | 
						
						
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							| Screening Logistics: | 
							  | 
						
						
							| Available: | 
							Yes | 
						
						
							| Storage Box: | 
							288 | 
						
						
							| Position in Box: | 
							42 | 
						
						
							| EP1 batch: | 
							none | 
						
						
							| EP1 batch after irradiation: | 
							10200 | 
						
						
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							| Shipment: | 
							  | 
						
						
							| Grid number: | 
							409 | 
						
						
							| Position in grid: | 
							0 | 
						
						
							| Arrival for irradiation: | 
							29. Sep 2017 | 
						
						
							| Sent for analysis after irradiation: | 
							none | 
						
						
							| Return for assembly: | 
							none | 
						
						
							|   | 
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							| Irradiation: | 
							  | 
						
						
							| Date: | 
							22. Feb 2018 | 
						
						
							| Dose used: | 
							30 Gy | 
						
						
							| Temperature: | 
							25 °C | 
						
						
							| Position: | 
							2 | 
						
						
							| Bias voltage: | 
							0 V     (connected) | 
						
						
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							  | 
						
						
							| Annealing: | 
							  | 
						
						
							| Date: | 
							none | 
						
						
							| Temperature: | 
							none | 
						
						
							| Duration: | 
							none | 
						
						
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							| Measurement results: | 
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							| Voltage for Gain 100: | 
							T = +20 °C: 383.9557716 V     T = -25 °C: 348.296205 V | 
						
						
							| Voltage for Gain 150: | 
							T = +20 °C: 391.9072003 V     T = -25 °C: 355.7818612 V | 
						
						
							| Voltage for Gain 200: | 
							T = +20 °C: 396.3428608 V     T = -25 °C: 359.9850726 V | 
						
						
							| Gain/Voltage slope at M = 100: | 
							T = +20 °C: 4.489779677 V-1     T = -25 °C: 4.722402423 V-1 | 
						
						
							| Gain/Voltage slope at M = 150: | 
							T = +20 °C: 8.776423932 V-1     T = -25 °C: 9.441800307 V-1 | 
						
						
							| Gain/Voltage slope at M = 200: | 
							T = +20 °C: 15.07754416 V-1     T = -25 °C: 14.82905118 V-1 | 
						
						
							| Break-through voltage: | 
							T = +20 °C: 407.7078571 V     T = -25 °C: 374.327015 V | 
						
						
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							| Notes: | 
							
								
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					Characteristics
					
						
							| Temperature | 
							Measurement | 
							Notes | 
						
						
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					Progression of the current during irradiation
					
						
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