Show Hamamatsu Avalanche Photo Diode 1415016253
This is all the information about APD 1415016253. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1415016253 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1413016039/1415016253 |
| Unit: |
#2619 (barcode 1309029532) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C04 |
| Break-through voltage: |
417 V |
| Voltage for Gain 100 (T=+25°C): |
388.9 V |
| Dark current: |
6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
310 |
| Position in Box: |
18 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10384 |
| |
|
| Shipment: |
|
| Grid number: |
408 |
| Position in grid: |
12 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
27. Oct 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
25. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
388.9 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 389.3916064 V T = -25 °C: 353.2005779 V |
| Voltage for Gain 150: |
T = +20 °C: 397.311495 V T = -25 °C: 360.7536318 V |
| Voltage for Gain 200: |
T = +20 °C: 401.7069789 V T = -25 °C: 364.9842964 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.419835819 V-1 T = -25 °C: 4.717284824 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.630619641 V-1 T = -25 °C: 9.499496614 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.9748894 V-1 T = -25 °C: 14.89830442 V-1 |
| Break-through voltage: |
T = +20 °C: 416.9940182 V T = -25 °C: 380.5366311 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history