Show Hamamatsu Avalanche Photo Diode 1415016217
This is all the information about APD 1415016217. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1415016217 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1415016217/2313025258 |
| Unit: |
#1518 (barcode 1309015276) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G11 |
| Break-through voltage: |
419 V |
| Voltage for Gain 100 (T=+25°C): |
390.9 V |
| Dark current: |
5.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
40 |
| Position in Box: |
12 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10065 |
| |
|
| Shipment: |
|
| Grid number: |
407 |
| Position in grid: |
1 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
26. Nov 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
23. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 391.6849536 V T = -25 °C: 355.3313272 V |
| Voltage for Gain 150: |
T = +20 °C: 399.5795811 V T = -25 °C: 362.9752877 V |
| Voltage for Gain 200: |
T = +20 °C: 403.9511455 V T = -25 °C: 367.2769119 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.991043189 V-1 T = -25 °C: 4.482283891 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.290167954 V-1 T = -25 °C: 9.402854897 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.17904355 V-1 T = -25 °C: 15.58284915 V-1 |
| Break-through voltage: |
T = +20 °C: 418.1364106 V T = -25 °C: 382.8092079 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
