Show Hamamatsu Avalanche Photo Diode 1415016209
This is all the information about APD 1415016209. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1415016209 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1415016209/2809031471 |
| Unit: |
#3342 (barcode 1309036837) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F04 |
| Break-through voltage: |
416 V |
| Voltage for Gain 100 (T=+25°C): |
387.8 V |
| Dark current: |
4.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
40 |
| Position in Box: |
9 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10065 |
| |
|
| Shipment: |
|
| Grid number: |
406 |
| Position in grid: |
13 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
03. Jan 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
29. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
30. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 388.8276103 V T = -25 °C: 352.6836233 V |
| Voltage for Gain 150: |
T = +20 °C: 396.719699 V T = -25 °C: 360.2464907 V |
| Voltage for Gain 200: |
T = +20 °C: 401.0840196 V T = -25 °C: 364.5269214 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.527592126 V-1 T = -25 °C: 4.746297784 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.611155321 V-1 T = -25 °C: 9.487912632 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.88413094 V-1 T = -25 °C: 15.88620171 V-1 |
| Break-through voltage: |
T = +20 °C: 414.5904655 V T = -25 °C: 379.5846356 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
