Show Hamamatsu Avalanche Photo Diode 1414016142
This is all the information about APD 1414016142. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1414016142 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C11 |
| Break-through voltage: |
424 V |
| Voltage for Gain 100 (T=+25°C): |
394.8 V |
| Dark current: |
4.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
309 |
| Position in Box: |
42 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10383 |
| |
|
| Shipment: |
|
| Grid number: |
403 |
| Position in grid: |
19 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
20. Oct 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
20. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
394.8 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 395.5660626 V T = -25 °C: 359.1790565 V |
| Voltage for Gain 150: |
T = +20 °C: 403.4369194 V T = -25 °C: 366.8267447 V |
| Voltage for Gain 200: |
T = +20 °C: 407.798386 V T = -25 °C: 371.1053039 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.410957019 V-1 T = -25 °C: 4.690083808 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.639661262 V-1 T = -25 °C: 9.353143889 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.00557636 V-1 T = -25 °C: 14.6923322 V-1 |
| Break-through voltage: |
T = +20 °C: 423.4205744 V T = -25 °C: 386.9625744 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history