Show Hamamatsu Avalanche Photo Diode 1413016034
This is all the information about APD 1413016034. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1413016034 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C05 |
| Break-through voltage: |
417 V |
| Voltage for Gain 100 (T=+25°C): |
388.5 V |
| Dark current: |
7.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
361 |
| Position in Box: |
34 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10553 |
| |
|
| Shipment: |
|
| Grid number: |
399 |
| Position in grid: |
10 |
| Arrival for irradiation: |
02. Nov 2017 |
| Sent for analysis after irradiation: |
03. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
03. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
388.5 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 389.1417746 V T = -25 °C: 352.948725 V |
| Voltage for Gain 150: |
T = +20 °C: 396.9766113 V T = -25 °C: 360.4670153 V |
| Voltage for Gain 200: |
T = +20 °C: 401.3322906 V T = -25 °C: 364.6730092 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.583446412 V-1 T = -25 °C: 4.850993558 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.047663297 V-1 T = -25 °C: 8.922930127 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.11340584 V-1 T = -25 °C: 15.73971906 V-1 |
| Break-through voltage: |
T = +20 °C: 417.1068196 V T = -25 °C: 380.4822351 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
