Show Hamamatsu Avalanche Photo Diode 1412016022
This is all the information about APD 1412016022. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1412016022 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E03 |
| Break-through voltage: |
423 V |
| Voltage for Gain 100 (T=+25°C): |
394.7 V |
| Dark current: |
7.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
309 |
| Position in Box: |
2 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10382 |
| |
|
| Shipment: |
|
| Grid number: |
399 |
| Position in grid: |
5 |
| Arrival for irradiation: |
02. Nov 2017 |
| Sent for analysis after irradiation: |
03. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
03. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
394.7 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 395.1798748 V T = -25 °C: 359.1851311 V |
| Voltage for Gain 150: |
T = +20 °C: 403.2226952 V T = -25 °C: 366.9891708 V |
| Voltage for Gain 200: |
T = +20 °C: 407.6838322 V T = -25 °C: 371.4232522 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.427793847 V-1 T = -25 °C: 4.564648007 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.517236704 V-1 T = -25 °C: 8.922455298 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.63847236 V-1 T = -25 °C: 14.67402099 V-1 |
| Break-through voltage: |
T = +20 °C: 423.3367199 V T = -25 °C: 386.6382799 V |
| |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history