Show Hamamatsu Avalanche Photo Diode 1412015989
This is all the information about APD 1412015989. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1412015989 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G08 |
| Break-through voltage: |
423 V |
| Voltage for Gain 100 (T=+25°C): |
394.3 V |
| Dark current: |
18.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
380 |
| Position in Box: |
48 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10582 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 395.0872647 V T = -25 °C: 358.4452392 V |
| Voltage for Gain 150: |
T = +20 °C: 402.8860852 V T = -25 °C: 366.0924084 V |
| Voltage for Gain 200: |
T = +20 °C: 407.2514126 V T = -25 °C: 370.3902933 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.369394384 V-1 T = -25 °C: 4.592022593 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.038019039 V-1 T = -25 °C: 9.12038772 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.9154951 V-1 T = -25 °C: 16.2180661 V-1 |
| Break-through voltage: |
T = +20 °C: 422.4345454 V T = -25 °C: 386.0825543 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
