Show Hamamatsu Avalanche Photo Diode 1412015951
This is all the information about APD 1412015951. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1412015951 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
F05 |
Break-through voltage: |
421 V |
Voltage for Gain 100 (T=+25°C): |
392.4 V |
Dark current: |
5.7 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
38 |
Position in Box: |
30 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10062 |
|
|
Shipment: |
|
Grid number: |
395 |
Position in grid: |
14 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
16. Jan 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
28. Nov 2018 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
30. Nov 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 393.6048711 V T = -25 °C: 357.041545 V |
Voltage for Gain 150: |
T = +20 °C: 401.5392252 V T = -25 °C: 364.7201338 V |
Voltage for Gain 200: |
T = +20 °C: 405.9402467 V T = -25 °C: 369.0553494 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.444570687 V-1 T = -25 °C: 4.735900156 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.18613415 V-1 T = -25 °C: 8.887906323 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.56717745 V-1 T = -25 °C: 13.94584477 V-1 |
Break-through voltage: |
T = +20 °C: 421.0005957 V T = -25 °C: 384.401324 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history