Show Hamamatsu Avalanche Photo Diode 1411015935
This is all the information about APD 1411015935. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1411015935 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F05 |
| Break-through voltage: |
416 V |
| Voltage for Gain 100 (T=+25°C): |
387.9 V |
| Dark current: |
4.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
369 |
| Position in Box: |
15 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10562 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 388.4765043 V T = -25 °C: 352.5757668 V |
| Voltage for Gain 150: |
T = +20 °C: 396.3263024 V T = -25 °C: 360.0796502 V |
| Voltage for Gain 200: |
T = +20 °C: 400.6718424 V T = -25 °C: 364.3050267 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.436681978 V-1 T = -25 °C: 4.613330859 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.64979736 V-1 T = -25 °C: 9.176427447 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.01150318 V-1 T = -25 °C: 16.11445594 V-1 |
| Break-through voltage: |
T = +20 °C: 416.0363506 V T = -25 °C: 380.07858 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
