Show Hamamatsu Avalanche Photo Diode 1411015924
This is all the information about APD 1411015924. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1411015924 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2911033209/1411015924 |
| Unit: |
#3362 (barcode 1309038718) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C02 |
| Break-through voltage: |
412 V |
| Voltage for Gain 100 (T=+25°C): |
384.2 V |
| Dark current: |
7.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
309 |
| Position in Box: |
25 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10383 |
| |
|
| Shipment: |
|
| Grid number: |
394 |
| Position in grid: |
19 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
20. Oct 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
19. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
384.2 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 384.64703 V T = -25 °C: 349.0970005 V |
| Voltage for Gain 150: |
T = +20 °C: 392.5543595 V T = -25 °C: 356.4796046 V |
| Voltage for Gain 200: |
T = +20 °C: 396.9383442 V T = -25 °C: 360.6257286 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.385488945 V-1 T = -25 °C: 4.911841169 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.506920151 V-1 T = -25 °C: 9.140763207 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.80035025 V-1 T = -25 °C: 16.31709982 V-1 |
| Break-through voltage: |
T = +20 °C: 410.2676918 V T = -25 °C: 375.1795351 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history