Show Hamamatsu Avalanche Photo Diode 1411015919
This is all the information about APD 1411015919. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1411015919 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E03 |
| Break-through voltage: |
416 V |
| Voltage for Gain 100 (T=+25°C): |
387.5 V |
| Dark current: |
5.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
309 |
| Position in Box: |
20 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10382 |
| |
|
| Shipment: |
|
| Grid number: |
394 |
| Position in grid: |
14 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
20. Oct 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
19. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
387.5 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 388.6666366 V T = -25 °C: 352.796785 V |
| Voltage for Gain 150: |
T = +20 °C: 396.5250244 V T = -25 °C: 360.2844603 V |
| Voltage for Gain 200: |
T = +20 °C: 400.8759367 V T = -25 °C: 364.4758063 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.410264157 V-1 T = -25 °C: 4.809080007 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.577017433 V-1 T = -25 °C: 9.250475583 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.9254961 V-1 T = -25 °C: 14.56077554 V-1 |
| Break-through voltage: |
T = +20 °C: 415.7608475 V T = -25 °C: 379.6996916 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history