Show Hamamatsu Avalanche Photo Diode 1411015905
This is all the information about APD 1411015905. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1411015905 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
unknown |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F11 |
| Break-through voltage: |
423 V |
| Voltage for Gain 100 (T=+25°C): |
394.1 V |
| Dark current: |
6.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
none |
| Position in Box: |
none |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
none |
| |
|
| Shipment: |
|
| Grid number: |
394 |
| Position in grid: |
0 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
20. Oct 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
19. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
394.1 V (not connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 395.1771258 V T = -25 °C: 358.6565142 V |
| Voltage for Gain 150: |
T = +20 °C: 402.9502874 V T = -25 °C: 366.3372127 V |
| Voltage for Gain 200: |
T = +20 °C: 407.2924836 V T = -25 °C: 370.6542187 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.400339398 V-1 T = -25 °C: 4.687332644 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.110688274 V-1 T = -25 °C: 8.989041757 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.11072415 V-1 T = -25 °C: 15.39426949 V-1 |
| Break-through voltage: |
T = +20 °C: 423.1740378 V T = -25 °C: 386.0877993 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
