Show Hamamatsu Avalanche Photo Diode 1411015899
This is all the information about APD 1411015899. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1411015899 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C12 |
| Break-through voltage: |
424 V |
| Voltage for Gain 100 (T=+25°C): |
396.3 V |
| Dark current: |
5.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
335 |
| Position in Box: |
33 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10503 |
| |
|
| Shipment: |
|
| Grid number: |
393 |
| Position in grid: |
14 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 396.225003 V T = -25 °C: 359.5508844 V |
| Voltage for Gain 150: |
T = +20 °C: 404.1255303 V T = -25 °C: 367.2428487 V |
| Voltage for Gain 200: |
T = +20 °C: 408.4987029 V T = -25 °C: 371.5315343 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.425151044 V-1 T = -25 °C: 4.570638835 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.682863143 V-1 T = -25 °C: 8.725952007 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.09869861 V-1 T = -25 °C: 15.0618839 V-1 |
| Break-through voltage: |
T = +20 °C: 423.5573989 V T = -25 °C: 386.8296793 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
