Show Hamamatsu Avalanche Photo Diode 1411015890
This is all the information about APD 1411015890. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1411015890 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
A08 |
Break-through voltage: |
416 V |
Voltage for Gain 100 (T=+25°C): |
389.2 V |
Dark current: |
7.5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
335 |
Position in Box: |
24 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10503 |
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Shipment: |
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Grid number: |
393 |
Position in grid: |
5 |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 388.6128112 V T = -25 °C: 352.4789534 V |
Voltage for Gain 150: |
T = +20 °C: 396.4922782 V T = -25 °C: 359.9337215 V |
Voltage for Gain 200: |
T = +20 °C: 400.8442265 V T = -25 °C: 364.1497635 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.360339497 V-1 T = -25 °C: 4.518097969 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.486181617 V-1 T = -25 °C: 9.230221992 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.71621442 V-1 T = -25 °C: 15.00380504 V-1 |
Break-through voltage: |
T = +20 °C: 411.0260777 V T = -25 °C: 378.334641 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history