Show Hamamatsu Avalanche Photo Diode 1411015887
This is all the information about APD 1411015887. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1411015887 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E12 |
Break-through voltage: |
425 V |
Voltage for Gain 100 (T=+25°C): |
396.5 V |
Dark current: |
6.4 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
335 |
Position in Box: |
21 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10502 |
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Shipment: |
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Grid number: |
393 |
Position in grid: |
2 |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 396.961025 V T = -25 °C: 360.4465623 V |
Voltage for Gain 150: |
T = +20 °C: 404.8723208 V T = -25 °C: 368.1593634 V |
Voltage for Gain 200: |
T = +20 °C: 409.2678971 V T = -25 °C: 372.4875201 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.5558929 V-1 T = -25 °C: 4.570318035 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.006740773 V-1 T = -25 °C: 8.931541994 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.00031607 V-1 T = -25 °C: 15.60225157 V-1 |
Break-through voltage: |
T = +20 °C: 424.8333959 V T = -25 °C: 388.187303 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history