Show Hamamatsu Avalanche Photo Diode 1411015884
This is all the information about APD 1411015884. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1411015884 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1411015930/1411015884 |
| Unit: |
#2834 (barcode 1309024933) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D07 |
| Break-through voltage: |
416 V |
| Voltage for Gain 100 (T=+25°C): |
387.7 V |
| Dark current: |
4.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
38 |
| Position in Box: |
26 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10062 |
| |
|
| Shipment: |
|
| Grid number: |
392 |
| Position in grid: |
19 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
16. Jan 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
29. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
30. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 388.4749099 V T = -25 °C: 352.3101374 V |
| Voltage for Gain 150: |
T = +20 °C: 396.4252847 V T = -25 °C: 359.8682834 V |
| Voltage for Gain 200: |
T = +20 °C: 400.853837 V T = -25 °C: 364.1157396 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.337617955 V-1 T = -25 °C: 4.940027264 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.857126522 V-1 T = -25 °C: 9.526715046 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.98692361 V-1 T = -25 °C: 15.26976816 V-1 |
| Break-through voltage: |
T = +20 °C: 415.8552143 V T = -25 °C: 379.2726341 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
