Show Hamamatsu Avalanche Photo Diode 1411015876
This is all the information about APD 1411015876. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1411015876 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C07 |
| Break-through voltage: |
419 V |
| Voltage for Gain 100 (T=+25°C): |
389.9 V |
| Dark current: |
5.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
38 |
| Position in Box: |
19 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10062 |
| |
|
| Shipment: |
|
| Grid number: |
392 |
| Position in grid: |
11 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
16. Jan 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
29. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
30. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 390.4580558 V T = -25 °C: 354.0631735 V |
| Voltage for Gain 150: |
T = +20 °C: 398.4113446 V T = -25 °C: 361.6794682 V |
| Voltage for Gain 200: |
T = +20 °C: 402.8256579 V T = -25 °C: 365.9713838 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.429717585 V-1 T = -25 °C: 4.68971292 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.127383882 V-1 T = -25 °C: 8.858718433 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.50477574 V-1 T = -25 °C: 14.05990627 V-1 |
| Break-through voltage: |
T = +20 °C: 418.1894514 V T = -25 °C: 381.4438643 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
