Show Hamamatsu Avalanche Photo Diode 1410015834
This is all the information about APD 1410015834. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1410015834 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B12 |
| Break-through voltage: |
429 V |
| Voltage for Gain 100 (T=+25°C): |
400.2 V |
| Dark current: |
7.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
369 |
| Position in Box: |
8 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10562 |
| |
|
| Shipment: |
|
| Grid number: |
390 |
| Position in grid: |
18 |
| Arrival for irradiation: |
11. Aug 2016 |
| Sent for analysis after irradiation: |
02. Sep 2016 |
| Return for assembly: |
06. Oct 2016 |
| |
|
| Irradiation: |
|
| Date: |
23. Aug 2016 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
3 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
24. Aug 2016 |
| Temperature: |
80 °C |
| Duration: |
10 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 400.3610394 V T = -25 °C: 363.5260963 V |
| Voltage for Gain 150: |
T = +20 °C: 408.292525 V T = -25 °C: 371.3503737 V |
| Voltage for Gain 200: |
T = +20 °C: 412.6955824 V T = -25 °C: 375.7136366 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.427322586 V-1 T = -25 °C: 4.480314773 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.665347046 V-1 T = -25 °C: 8.714139426 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.0444614 V-1 T = -25 °C: 15.06666921 V-1 |
| Break-through voltage: |
T = +20 °C: 428.4183027 V T = -25 °C: 391.7164369 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
