Show Hamamatsu Avalanche Photo Diode 0617005299
This is all the information about APD 0617005299. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0617005299 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F07 |
| Break-through voltage: |
444 V |
| Voltage for Gain 100 (T=+25°C): |
417.3 V |
| Dark current: |
17.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
45 |
| Position in Box: |
24 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10074 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
24. Jul 2018 |
| Sent for analysis after irradiation: |
21. Aug 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Aug 2018 |
| Dose used: |
30 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
17. Aug 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 416.6560096 V T = -25 °C: 379.4267582 V |
| Voltage for Gain 150: |
T = +20 °C: 424.600292 V T = -25 °C: 387.3382088 V |
| Voltage for Gain 200: |
T = +20 °C: 429.0102018 V T = -25 °C: 391.7092032 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.592459414 V-1 T = -25 °C: 4.351794328 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.980200686 V-1 T = -25 °C: 9.286947568 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.81984472 V-1 T = -25 °C: 14.31164455 V-1 |
| Break-through voltage: |
T = +20 °C: 439.9893662 V T = -25 °C: 406.8437547 V |
| |
|
| Notes: |
foam
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
