Show Hamamatsu Avalanche Photo Diode 1402015240
This is all the information about APD 1402015240. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1402015240 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G11 |
| Break-through voltage: |
427 V |
| Voltage for Gain 100 (T=+25°C): |
399 V |
| Dark current: |
6.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
307 |
| Position in Box: |
48 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10380 |
| |
|
| Shipment: |
|
| Grid number: |
363 |
| Position in grid: |
9 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
03. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
26. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
399 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 399.8737233 V T = -25 °C: 363.3320103 V |
| Voltage for Gain 150: |
T = +20 °C: 407.778939 V T = -25 °C: 371.0786034 V |
| Voltage for Gain 200: |
T = +20 °C: 412.1581803 V T = -25 °C: 375.408409 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.600142697 V-1 T = -25 °C: 4.568231606 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.103166543 V-1 T = -25 °C: 8.948046442 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.14458581 V-1 T = -25 °C: 15.80538437 V-1 |
| Break-through voltage: |
T = +20 °C: 424.5135411 V T = -25 °C: 390.7530932 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
