Show Hamamatsu Avalanche Photo Diode 1402015238
This is all the information about APD 1402015238. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1402015238 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F11 |
| Break-through voltage: |
427 V |
| Voltage for Gain 100 (T=+25°C): |
399.1 V |
| Dark current: |
6.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
356 |
| Position in Box: |
45 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10542 |
| |
|
| Shipment: |
|
| Grid number: |
363 |
| Position in grid: |
7 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
03. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
26. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
399.1 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 399.3492651 V T = -25 °C: 362.8027749 V |
| Voltage for Gain 150: |
T = +20 °C: 407.2724807 V T = -25 °C: 370.5702982 V |
| Voltage for Gain 200: |
T = +20 °C: 411.6616478 V T = -25 °C: 374.8768001 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.448865163 V-1 T = -25 °C: 4.744713891 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.691350154 V-1 T = -25 °C: 9.545741449 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.04760837 V-1 T = -25 °C: 14.90542425 V-1 |
| Break-through voltage: |
T = +20 °C: 426.9260353 V T = -25 °C: 390.1359277 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
