Show Hamamatsu Avalanche Photo Diode 1402015207
This is all the information about APD 1402015207. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1402015207 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G06 |
| Break-through voltage: |
425 V |
| Voltage for Gain 100 (T=+25°C): |
396.6 V |
| Dark current: |
4.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
293 |
| Position in Box: |
8 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10207 |
| |
|
| Shipment: |
|
| Grid number: |
361 |
| Position in grid: |
17 |
| Arrival for irradiation: |
19. Sep 2016 |
| Sent for analysis after irradiation: |
30. Sep 2016 |
| Return for assembly: |
02. Nov 2016 |
| |
|
| Irradiation: |
|
| Date: |
28. Sep 2016 |
| Dose used: |
36 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
28. Sep 2016 |
| Temperature: |
80 °C |
| Duration: |
10 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 397.1120489 V T = -25 °C: 360.9214489 V |
| Voltage for Gain 150: |
T = +20 °C: 405.0732226 V T = -25 °C: 368.5978651 V |
| Voltage for Gain 200: |
T = +20 °C: 409.5010693 V T = -25 °C: 372.8728076 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.477118082 V-1 T = -25 °C: 4.724268773 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.709927608 V-1 T = -25 °C: 9.544989162 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.19276835 V-1 T = -25 °C: 14.90453571 V-1 |
| Break-through voltage: |
T = +20 °C: 424.8334049 V T = -25 °C: 388.6746296 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
