Show Hamamatsu Avalanche Photo Diode 1320015045
This is all the information about APD 1320015045. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1320015045 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D14 |
| Break-through voltage: |
447 V |
| Voltage for Gain 100 (T=+25°C): |
418.5 V |
| Dark current: |
8.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
308 |
| Position in Box: |
39 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10381 |
| |
|
| Shipment: |
|
| Grid number: |
354 |
| Position in grid: |
5 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
20. Oct 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
19. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
418.5 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 419.0259487 V T = -25 °C: 382.4952747 V |
| Voltage for Gain 150: |
T = +20 °C: 426.9454533 V T = -25 °C: 390.3611619 V |
| Voltage for Gain 200: |
T = +20 °C: 431.3428605 V T = -25 °C: 394.7182907 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.544783838 V-1 T = -25 °C: 4.470527578 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.985296278 V-1 T = -25 °C: 8.663814246 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.90696203 V-1 T = -25 °C: 15.09154715 V-1 |
| Break-through voltage: |
T = +20 °C: 440.0110214 V T = -25 °C: 410.2607993 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history