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Show Hamamatsu Avalanche Photo Diode 1320015037


This is all the information about APD 1320015037. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1320015037
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: B07
Break-through voltage: 447 V
Voltage for Gain 100 (T=+25°C): 418.1 V
Dark current: 9.1 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 345
Position in Box: 30
EP1 batch: none
EP1 batch after irradiation: 10523
   
Shipment:  
Grid number: 353
Position in grid: 17
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Characteristics

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Progression of the current during irradiation

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Version history

Time Author Change comment
05. Feb 2021 11:32:33 CET jreher Updated box and position via API.
17. Aug 2020 15:09:24 CEST vwerner Updated APD batch assignment via API.
11. Aug 2020 17:54:23 CEST jreher Updated APD location via API.
01. Aug 2016 17:29:00 CEST Tobias Assigned to grid via information extracted from APD DB.
23. Jun 2016 10:31:13 CEST Tobias Imported from Hamamatsu datasheet.