Show Hamamatsu Avalanche Photo Diode 1320015002
This is all the information about APD 1320015002. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1320015002 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D05 |
| Break-through voltage: |
442 V |
| Voltage for Gain 100 (T=+25°C): |
413.7 V |
| Dark current: |
8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
285 |
| Position in Box: |
7 |
| EP1 batch: |
203 |
| EP1 batch after irradiation: |
10435 |
| |
|
| Shipment: |
|
| Grid number: |
352 |
| Position in grid: |
13 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 414.3644716 V T = -25 °C: 377.4722755 V |
| Voltage for Gain 150: |
T = +20 °C: 422.3847879 V T = -25 °C: 385.3858223 V |
| Voltage for Gain 200: |
T = +20 °C: 426.8239939 V T = -25 °C: 389.7546629 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.339335831 V-1 T = -25 °C: 4.357264629 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.353143143 V-1 T = -25 °C: 8.494716335 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.33402766 V-1 T = -25 °C: 14.59256777 V-1 |
| Break-through voltage: |
T = +20 °C: 439.8247017 V T = -25 °C: 405.2208807 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
