Show Hamamatsu Avalanche Photo Diode 1319014998
This is all the information about APD 1319014998. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1319014998 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A10 |
| Break-through voltage: |
445 V |
| Voltage for Gain 100 (T=+25°C): |
417.7 V |
| Dark current: |
9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
285 |
| Position in Box: |
3 |
| EP1 batch: |
203 |
| EP1 batch after irradiation: |
10435 |
| |
|
| Shipment: |
|
| Grid number: |
352 |
| Position in grid: |
9 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 417.6562163 V T = -25 °C: 382.0586738 V |
| Voltage for Gain 150: |
T = +20 °C: 425.6599618 V T = -25 °C: 390.0119449 V |
| Voltage for Gain 200: |
T = +20 °C: 430.0988401 V T = -25 °C: 394.319786 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.315363473 V-1 T = -25 °C: 4.82809415 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.081351427 V-1 T = -25 °C: 8.773698879 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.06276983 V-1 T = -25 °C: 14.52039887 V-1 |
| Break-through voltage: |
T = +20 °C: 439.9826274 V T = -25 °C: 408.4999304 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
