Show Hamamatsu Avalanche Photo Diode 1319014993
This is all the information about APD 1319014993. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1319014993 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G11 |
| Break-through voltage: |
441 V |
| Voltage for Gain 100 (T=+25°C): |
412.5 V |
| Dark current: |
7.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
284 |
| Position in Box: |
48 |
| EP1 batch: |
203 |
| EP1 batch after irradiation: |
10435 |
| |
|
| Shipment: |
|
| Grid number: |
352 |
| Position in grid: |
4 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 412.9308437 V T = -25 °C: 376.3587314 V |
| Voltage for Gain 150: |
T = +20 °C: 420.8790178 V T = -25 °C: 384.2174579 V |
| Voltage for Gain 200: |
T = +20 °C: 425.2968126 V T = -25 °C: 388.5621942 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.522385373 V-1 T = -25 °C: 4.260833804 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.915410374 V-1 T = -25 °C: 8.737659987 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.84423178 V-1 T = -25 °C: 15.31305292 V-1 |
| Break-through voltage: |
T = +20 °C: 439.872255 V T = -25 °C: 404.3079753 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history