Show Hamamatsu Avalanche Photo Diode 1319014964
This is all the information about APD 1319014964. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1319014964 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C04 |
| Break-through voltage: |
440 V |
| Voltage for Gain 100 (T=+25°C): |
411.6 V |
| Dark current: |
9.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
377 |
| Position in Box: |
44 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10577 |
| |
|
| Shipment: |
|
| Grid number: |
351 |
| Position in grid: |
1 |
| Arrival for irradiation: |
11. Aug 2016 |
| Sent for analysis after irradiation: |
02. Sep 2016 |
| Return for assembly: |
06. Oct 2016 |
| |
|
| Irradiation: |
|
| Date: |
23. Aug 2016 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
2 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
24. Aug 2016 |
| Temperature: |
80 °C |
| Duration: |
10 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 412.0751622 V T = -25 °C: 375.2308799 V |
| Voltage for Gain 150: |
T = +20 °C: 420.0013272 V T = -25 °C: 383.1301212 V |
| Voltage for Gain 200: |
T = +20 °C: 424.4097212 V T = -25 °C: 387.5278887 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.524846997 V-1 T = -25 °C: 4.489553481 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.930323788 V-1 T = -25 °C: 8.814901162 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.8045454 V-1 T = -25 °C: 15.49639537 V-1 |
| Break-through voltage: |
T = +20 °C: 439.7954555 V T = -25 °C: 403.4800475 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
