Show Hamamatsu Avalanche Photo Diode 1318014898
This is all the information about APD 1318014898. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1318014898 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G12 |
| Break-through voltage: |
446 V |
| Voltage for Gain 100 (T=+25°C): |
417.7 V |
| Dark current: |
9.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
292 |
| Position in Box: |
19 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10206 |
| |
|
| Shipment: |
|
| Grid number: |
348 |
| Position in grid: |
0 |
| Arrival for irradiation: |
02. Nov 2016 |
| Sent for analysis after irradiation: |
10. Nov 2016 |
| Return for assembly: |
09. Dec 2016 |
| |
|
| Irradiation: |
|
| Date: |
04. Nov 2016 |
| Dose used: |
30 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
350 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 418.050417 V T = -25 °C: 381.4897598 V |
| Voltage for Gain 150: |
T = +20 °C: 425.9866785 V T = -25 °C: 389.3462843 V |
| Voltage for Gain 200: |
T = +20 °C: 430.3941311 V T = -25 °C: 393.708578 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.541519123 V-1 T = -25 °C: 4.440459677 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.94769269 V-1 T = -25 °C: 8.708547175 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.88427377 V-1 T = -25 °C: 15.2232081 V-1 |
| Break-through voltage: |
T = +20 °C: 440.0107325 V T = -25 °C: 409.6979722 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
