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Show Hamamatsu Avalanche Photo Diode 1317014766


This is all the information about APD 1317014766. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1317014766
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: F10
Break-through voltage: 438 V
Voltage for Gain 100 (T=+25°C): 412.1 V
Dark current: 9.5 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 519
Position in Box: 36
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: 342
Position in grid: 13
Arrival for irradiation: 29. Sep 2017
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Characteristics

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Progression of the current during irradiation

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Version history

Time Author Change comment
27. Jul 2021 16:23:37 CEST oafedulidis Updated box and position via API.
20. Jul 2021 14:54:42 CEST oafedulidis Updated APD location via API.
20. Jul 2021 14:54:25 CEST oafedulidis Updated box and position via API.
19. May 2021 14:42:58 CEST jreher Updated APD location via API.
29. Sep 2017 10:21:28 CEST markus.moritz Entered arrival for irradiation date.
01. Aug 2016 17:28:53 CEST Tobias Assigned to grid via information extracted from APD DB.
23. Jun 2016 10:29:46 CEST Tobias Imported from Hamamatsu datasheet.