Show Hamamatsu Avalanche Photo Diode 1316014721
This is all the information about APD 1316014721. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1316014721 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G07 |
| Break-through voltage: |
442 V |
| Voltage for Gain 100 (T=+25°C): |
413.4 V |
| Dark current: |
4.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
362 |
| Position in Box: |
10 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10554 |
| |
|
| Shipment: |
|
| Grid number: |
340 |
| Position in grid: |
16 |
| Arrival for irradiation: |
02. Nov 2017 |
| Sent for analysis after irradiation: |
23. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
413.4 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 413.5699756 V T = -25 °C: 376.5651799 V |
| Voltage for Gain 150: |
T = +20 °C: 421.5692781 V T = -25 °C: 384.5254286 V |
| Voltage for Gain 200: |
T = +20 °C: 425.9955175 V T = -25 °C: 388.9332378 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.336897651 V-1 T = -25 °C: 4.362579937 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.400544523 V-1 T = -25 °C: 8.398525516 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.33668247 V-1 T = -25 °C: 14.50855676 V-1 |
| Break-through voltage: |
T = +20 °C: 440.0059319 V T = -25 °C: 405.0934408 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
