Show Hamamatsu Avalanche Photo Diode 1315014666
This is all the information about APD 1315014666. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1315014666 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E02 |
| Break-through voltage: |
435 V |
| Voltage for Gain 100 (T=+25°C): |
406.8 V |
| Dark current: |
8.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
35 |
| Position in Box: |
20 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10057 |
| |
|
| Shipment: |
|
| Grid number: |
338 |
| Position in grid: |
7 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
03. Jan 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
05. Dec 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
10. Dec 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 407.4494356 V T = -25 °C: 370.5131956 V |
| Voltage for Gain 150: |
T = +20 °C: 415.3832962 V T = -25 °C: 378.4233674 V |
| Voltage for Gain 200: |
T = +20 °C: 419.8111445 V T = -25 °C: 382.8150104 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.268331721 V-1 T = -25 °C: 4.481057458 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.805711068 V-1 T = -25 °C: 8.6193341 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.59562474 V-1 T = -25 °C: 13.35047496 V-1 |
| Break-through voltage: |
T = +20 °C: 434.9019306 V T = -25 °C: 398.1187329 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
