Show Hamamatsu Avalanche Photo Diode 1315014632
This is all the information about APD 1315014632. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1315014632 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D05 |
| Break-through voltage: |
434 V |
| Voltage for Gain 100 (T=+25°C): |
407.9 V |
| Dark current: |
12.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
289 |
| Position in Box: |
36 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10201 |
| |
|
| Shipment: |
|
| Grid number: |
336 |
| Position in grid: |
17 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Feb 2018 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
4 |
| Bias voltage: |
0 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 408.5362796 V T = -25 °C: 371.730584 V |
| Voltage for Gain 150: |
T = +20 °C: 416.5032083 V T = -25 °C: 379.6297704 V |
| Voltage for Gain 200: |
T = +20 °C: 420.9079396 V T = -25 °C: 384.0038038 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.347447422 V-1 T = -25 °C: 4.362285327 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.455184951 V-1 T = -25 °C: 9.332054557 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.57060163 V-1 T = -25 °C: 14.48485452 V-1 |
| Break-through voltage: |
T = +20 °C: 435.9814472 V T = -25 °C: 399.3904414 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history