Show Hamamatsu Avalanche Photo Diode 0916010207
This is all the information about APD 0916010207. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0916010207 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0821008817/0916010207 |
| Unit: |
#2227 (barcode 1309020652) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E08 |
| Break-through voltage: |
406 V |
| Voltage for Gain 100 (T=+25°C): |
377.2 V |
| Dark current: |
4.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
339 |
| Position in Box: |
44 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10513 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 377.471799 V T = -25 °C: 342.4007939 V |
| Voltage for Gain 150: |
T = +20 °C: 385.386582 V T = -25 °C: 349.7499209 V |
| Voltage for Gain 200: |
T = +20 °C: 389.8001994 V T = -25 °C: 353.8644531 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.43283174 V-1 T = -25 °C: 4.810300971 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.52355097 V-1 T = -25 °C: 9.847920586 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.68976139 V-1 T = -25 °C: 15.55186419 V-1 |
| Break-through voltage: |
T = +20 °C: 405.6938887 V T = -25 °C: 369.392115 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history