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Show Hamamatsu Avalanche Photo Diode 0916010149


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Subdetector specification:  
Serial: 0916010149
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: In transit to Mainz
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: E13
Break-through voltage: 417 V
Voltage for Gain 100 (T=+25°C): 388.1 V
Dark current: 4.4 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 342
Position in Box: 6
EP1 batch: none
EP1 batch after irradiation: 10517
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 388.4491401 V     T = -25 °C: 352.2846232 V
Voltage for Gain 150: T = +20 °C: 396.3245278 V     T = -25 °C: 359.7881434 V
Voltage for Gain 200: T = +20 °C: 400.676792 V     T = -25 °C: 364.0141811 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.37702094 V-1     T = -25 °C: 4.640012481 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 8.577421631 V-1     T = -25 °C: 9.379495875 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 14.88604584 V-1     T = -25 °C: 14.71200227 V-1
Break-through voltage: T = +20 °C: 416.4393508 V     T = -25 °C: 379.9037836 V
   
Notes:


Characteristics

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Progression of the current during irradiation

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Version history

Time Author Change comment
16. Apr 2021 21:59:40 CEST jreher Updated APD characteristics via API.
05. Feb 2021 11:32:06 CET jreher Updated box and position via API.
07. Oct 2020 15:45:50 CEST jreher Updated APD location via API.
17. Aug 2020 14:53:27 CEST vwerner Updated APD batch assignment via API.
11. Aug 2020 17:54:06 CEST jreher Updated APD location via API.
23. Jun 2016 10:26:46 CEST Tobias Imported from Hamamatsu datasheet.