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Show Hamamatsu Avalanche Photo Diode 0916010145


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Subdetector specification:  
Serial: 0916010145
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: In transit to Mainz
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: B11
Break-through voltage: 415 V
Voltage for Gain 100 (T=+25°C): 386.2 V
Dark current: 4.1 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 342
Position in Box: 2
EP1 batch: none
EP1 batch after irradiation: 10517
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 387.008003 V     T = -25 °C: 350.9341228 V
Voltage for Gain 150: T = +20 °C: 394.9180776 V     T = -25 °C: 358.4618599 V
Voltage for Gain 200: T = +20 °C: 399.3282647 V     T = -25 °C: 362.6908498 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.562340632 V-1     T = -25 °C: 4.837301164 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 8.937691571 V-1     T = -25 °C: 8.852524723 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 13.79858449 V-1     T = -25 °C: 15.36953146 V-1
Break-through voltage: T = +20 °C: 414.5862595 V     T = -25 °C: 378.2813697 V
   
Notes:


Characteristics

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Progression of the current during irradiation

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Version history

Time Author Change comment
16. Apr 2021 21:59:38 CEST jreher Updated APD characteristics via API.
05. Feb 2021 11:32:05 CET jreher Updated box and position via API.
07. Oct 2020 15:45:49 CEST jreher Updated APD location via API.
17. Aug 2020 14:53:27 CEST vwerner Updated APD batch assignment via API.
11. Aug 2020 17:54:06 CEST jreher Updated APD location via API.
23. Jun 2016 10:26:46 CEST Tobias Imported from Hamamatsu datasheet.