Show Hamamatsu Avalanche Photo Diode 0915010069
This is all the information about APD 0915010069. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0915010069 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H09 |
| Break-through voltage: |
410 V |
| Voltage for Gain 100 (T=+25°C): |
380.9 V |
| Dark current: |
5.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
380 |
| Position in Box: |
10 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10581 |
| |
|
| Shipment: |
|
| Grid number: |
222 |
| Position in grid: |
16 |
| Arrival for irradiation: |
15. Jun 2016 |
| Sent for analysis after irradiation: |
08. Jul 2016 |
| Return for assembly: |
04. Aug 2016 |
| |
|
| Irradiation: |
|
| Date: |
30. Jun 2016 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
3 |
| Bias voltage: |
320 V (connection unknown) |
| |
|
| Annealing: |
|
| Date: |
01. Jul 2016 |
| Temperature: |
80 °C |
| Duration: |
8 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 381.5296867 V T = -25 °C: 345.978463 V |
| Voltage for Gain 150: |
T = +20 °C: 389.3920475 V T = -25 °C: 353.357421 V |
| Voltage for Gain 200: |
T = +20 °C: 393.7570421 V T = -25 °C: 357.5205551 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.431320441 V-1 T = -25 °C: 4.940724776 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.631261271 V-1 T = -25 °C: 9.172145408 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.99502004 V-1 T = -25 °C: 16.22857328 V-1 |
| Break-through voltage: |
T = +20 °C: 408.9136695 V T = -25 °C: 372.8540538 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
