Show Hamamatsu Avalanche Photo Diode 0914009995
This is all the information about APD 0914009995. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0914009995 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F13 |
| Break-through voltage: |
418 V |
| Voltage for Gain 100 (T=+25°C): |
389.7 V |
| Dark current: |
5.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
380 |
| Position in Box: |
9 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10581 |
| |
|
| Shipment: |
|
| Grid number: |
219 |
| Position in grid: |
16 |
| Arrival for irradiation: |
07. Jun 2016 |
| Sent for analysis after irradiation: |
23. Jun 2016 |
| Return for assembly: |
04. Aug 2016 |
| |
|
| Irradiation: |
|
| Date: |
07. Jun 2016 |
| Dose used: |
37 Gy |
| Temperature: |
25 °C |
| Position: |
2 |
| Bias voltage: |
320 V (connection unknown) |
| |
|
| Annealing: |
|
| Date: |
07. Jun 2016 |
| Temperature: |
80 °C |
| Duration: |
8 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 390.1279368 V T = -25 °C: 353.9291036 V |
| Voltage for Gain 150: |
T = +20 °C: 397.9267559 V T = -25 °C: 361.4521968 V |
| Voltage for Gain 200: |
T = +20 °C: 402.2507687 V T = -25 °C: 365.6652222 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.582744829 V-1 T = -25 °C: 4.877249312 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.182656324 V-1 T = -25 °C: 8.947150048 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.35738954 V-1 T = -25 °C: 15.83271107 V-1 |
| Break-through voltage: |
T = +20 °C: 417.6442026 V T = -25 °C: 381.4315014 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
