Show Hamamatsu Avalanche Photo Diode 0912009869
This is all the information about APD 0912009869. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0912009869 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E06 |
| Break-through voltage: |
410 V |
| Voltage for Gain 100 (T=+25°C): |
381.7 V |
| Dark current: |
3.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
347 |
| Position in Box: |
16 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10526 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 381.6474939 V T = -25 °C: 346.0572276 V |
| Voltage for Gain 150: |
T = +20 °C: 389.5797474 V T = -25 °C: 353.4559271 V |
| Voltage for Gain 200: |
T = +20 °C: 393.9786829 V T = -25 °C: 357.614171 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.346608212 V-1 T = -25 °C: 4.925189 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.221924965 V-1 T = -25 °C: 9.04319322 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.35586011 V-1 T = -25 °C: 15.96615941 V-1 |
| Break-through voltage: |
T = +20 °C: 409.786549 V T = -25 °C: 373.2468378 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
