Show Hamamatsu Avalanche Photo Diode 0912009854
This is all the information about APD 0912009854. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0912009854 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2003021685/0912009854 |
| Unit: |
#1903 (barcode 1309022212) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C02 |
| Break-through voltage: |
412 V |
| Voltage for Gain 100 (T=+25°C): |
384.7 V |
| Dark current: |
3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
347 |
| Position in Box: |
2 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10525 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 384.3485047 V T = -25 °C: 348.7260994 V |
| Voltage for Gain 150: |
T = +20 °C: 392.2591742 V T = -25 °C: 356.1662279 V |
| Voltage for Gain 200: |
T = +20 °C: 396.6553887 V T = -25 °C: 360.3685295 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.442992127 V-1 T = -25 °C: 4.627583011 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.776576158 V-1 T = -25 °C: 9.210224673 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.16503323 V-1 T = -25 °C: 14.50611709 V-1 |
| Break-through voltage: |
T = +20 °C: 410.6431909 V T = -25 °C: 375.5529355 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history