Show Hamamatsu Avalanche Photo Diode 2202023780
This is all the information about APD 2202023780. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2202023780 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2202023780/3217035499 |
| Unit: |
#2735 (barcode 1309025152) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A10 |
| Break-through voltage: |
414 V |
| Voltage for Gain 100 (T=+25°C): |
385.4 V |
| Dark current: |
6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
352 |
| Position in Box: |
38 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10535 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 386.1417497 V T = -25 °C: 350.5518823 V |
| Voltage for Gain 150: |
T = +20 °C: 393.9794095 V T = -25 °C: 358.0074241 V |
| Voltage for Gain 200: |
T = +20 °C: 398.3465927 V T = -25 °C: 362.1980183 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.553133712 V-1 T = -25 °C: 4.659031161 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.947049787 V-1 T = -25 °C: 9.322048782 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.91051391 V-1 T = -25 °C: 14.64095742 V-1 |
| Break-through voltage: |
T = +20 °C: 408.3298348 V T = -25 °C: 376.8772135 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history