Show Hamamatsu Avalanche Photo Diode 2202023776
This is all the information about APD 2202023776. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2202023776 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2812031733/2202023776 |
| Unit: |
#1945 (barcode 1309020072) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G10 |
| Break-through voltage: |
410 V |
| Voltage for Gain 100 (T=+25°C): |
381.6 V |
| Dark current: |
7.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
352 |
| Position in Box: |
34 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10535 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 381.6327664 V T = -25 °C: 346.3039052 V |
| Voltage for Gain 150: |
T = +20 °C: 389.3988408 V T = -25 °C: 353.6526773 V |
| Voltage for Gain 200: |
T = +20 °C: 393.71768 V T = -25 °C: 357.7550454 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.448116826 V-1 T = -25 °C: 4.856156132 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.762230334 V-1 T = -25 °C: 9.970234008 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.33455147 V-1 T = -25 °C: 15.97867028 V-1 |
| Break-through voltage: |
T = +20 °C: 404.5182594 V T = -25 °C: 372.5878867 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history