Show Hamamatsu Avalanche Photo Diode 2202023760
This is all the information about APD 2202023760. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2202023760 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D04 |
| Break-through voltage: |
405 V |
| Voltage for Gain 100 (T=+25°C): |
377 V |
| Dark current: |
4.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
378 |
| Position in Box: |
11 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10577 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 376.6927829 V T = -25 °C: 342.1602012 V |
| Voltage for Gain 150: |
T = +20 °C: 384.4867058 V T = -25 °C: 349.4391372 V |
| Voltage for Gain 200: |
T = +20 °C: 388.8416326 V T = -25 °C: 353.5241053 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.437112331 V-1 T = -25 °C: 4.942176892 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.587663999 V-1 T = -25 °C: 9.213816629 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.76953144 V-1 T = -25 °C: 16.48335703 V-1 |
| Break-through voltage: |
T = +20 °C: 404.6493915 V T = -25 °C: 368.8596544 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
