Show Hamamatsu Avalanche Photo Diode 2114023599
This is all the information about APD 2114023599. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2114023599 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B13 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
384.1 V |
| Dark current: |
16.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
410 |
| Position in Box: |
19 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10643 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 384.9880435 V T = -25 °C: 350.5495757 V |
| Voltage for Gain 150: |
T = +20 °C: 392.6311869 V T = -25 °C: 357.7240838 V |
| Voltage for Gain 200: |
T = +20 °C: 396.8728847 V T = -25 °C: 361.7332884 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.765697896 V-1 T = -25 °C: 4.855588148 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.586605122 V-1 T = -25 °C: 10.03171061 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.13990366 V-1 T = -25 °C: 16.29246061 V-1 |
| Break-through voltage: |
T = +20 °C: 410.4412995 V T = -25 °C: 375.1046472 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
