Show Hamamatsu Avalanche Photo Diode 2101022840
This is all the information about APD 2101022840. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2101022840 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E10 |
Break-through voltage: |
403 V |
Voltage for Gain 100 (T=+25°C): |
375.2 V |
Dark current: |
26 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
353 |
Position in Box: |
34 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10537 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 375.5066373 V T = -25 °C: 341.4518853 V |
Voltage for Gain 150: |
T = +20 °C: 383.0590876 V T = -25 °C: 348.5062678 V |
Voltage for Gain 200: |
T = +20 °C: 387.2947855 V T = -25 °C: 352.4761151 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.643053687 V-1 T = -25 °C: 4.994840799 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.293987276 V-1 T = -25 °C: 9.453954036 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.54118685 V-1 T = -25 °C: 15.09263059 V-1 |
Break-through voltage: |
T = +20 °C: 402.6340388 V T = -25 °C: 367.0961578 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history