Show Hamamatsu Avalanche Photo Diode 2019022724
This is all the information about APD 2019022724. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
2019022724 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
F15 |
Break-through voltage: |
409 V |
Voltage for Gain 100 (T=+25°C): |
384.2 V |
Dark current: |
28.1 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
405 |
Position in Box: |
4 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10636 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 383.2984439 V T = -25 °C: 348.6977667 V |
Voltage for Gain 150: |
T = +20 °C: 391.0298363 V T = -25 °C: 355.946982 V |
Voltage for Gain 200: |
T = +20 °C: 395.3407778 V T = -25 °C: 360.0157357 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.581089559 V-1 T = -25 °C: 5.11378653 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.035590969 V-1 T = -25 °C: 9.641854438 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.08986113 V-1 T = -25 °C: 15.39119141 V-1 |
Break-through voltage: |
T = +20 °C: 408.0825664 V T = -25 °C: 373.3509352 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history