Show Hamamatsu Avalanche Photo Diode 2016022581
This is all the information about APD 2016022581. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2016022581 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B13 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
378.8 V |
| Dark current: |
25.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
381 |
| Position in Box: |
26 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10583 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 379.7596282 V T = -25 °C: 345.1504982 V |
| Voltage for Gain 150: |
T = +20 °C: 387.4436149 V T = -25 °C: 352.3439573 V |
| Voltage for Gain 200: |
T = +20 °C: 391.7214699 V T = -25 °C: 356.3943294 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.816081707 V-1 T = -25 °C: 4.9856127 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.725452944 V-1 T = -25 °C: 9.38273652 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.18805614 V-1 T = -25 °C: 16.92564988 V-1 |
| Break-through voltage: |
T = +20 °C: 401.8745205 V T = -25 °C: 370.3855571 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
