Show Hamamatsu Avalanche Photo Diode 1314014584
This is all the information about APD 1314014584. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1314014584 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F05 |
| Break-through voltage: |
444 V |
| Voltage for Gain 100 (T=+25°C): |
414.9 V |
| Dark current: |
8.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
326 |
| Position in Box: |
32 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10692 |
| |
|
| Shipment: |
|
| Grid number: |
334 |
| Position in grid: |
11 |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 415.2112195 V T = -25 °C: 377.8601873 V |
| Voltage for Gain 150: |
T = +20 °C: 423.1804905 V T = -25 °C: 385.7828754 V |
| Voltage for Gain 200: |
T = +20 °C: 427.5958502 V T = -25 °C: 390.1758052 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.450716349 V-1 T = -25 °C: 4.59811519 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.702047146 V-1 T = -25 °C: 9.117053913 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.08371877 V-1 T = -25 °C: 14.09813471 V-1 |
| Break-through voltage: |
T = +20 °C: 443.2484075 V T = -25 °C: 406.0849107 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
