Show Hamamatsu Avalanche Photo Diode 1313014527
This is all the information about APD 1313014527. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1313014527 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
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|
| Installation information: |
|
| Label: |
none |
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|
| Manufacturer information: |
|
| Wafer position: |
E07 |
| Break-through voltage: |
437 V |
| Voltage for Gain 100 (T=+25°C): |
407.9 V |
| Dark current: |
6.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
284 |
| Position in Box: |
3 |
| EP1 batch: |
201 |
| EP1 batch after irradiation: |
10433 |
| |
|
| Shipment: |
|
| Grid number: |
332 |
| Position in grid: |
2 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
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|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 408.2533131 V T = -25 °C: 370.8792915 V |
| Voltage for Gain 150: |
T = +20 °C: 416.2764497 V T = -25 °C: 378.8629301 V |
| Voltage for Gain 200: |
T = +20 °C: 420.7267112 V T = -25 °C: 383.3280267 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.405733255 V-1 T = -25 °C: 4.359715134 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.483674141 V-1 T = -25 °C: 8.943133798 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.64721558 V-1 T = -25 °C: 13.65833914 V-1 |
| Break-through voltage: |
T = +20 °C: 436.5104878 V T = -25 °C: 399.6865787 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history